A general parameter-extraction method for transistor noise models

被引：8

作者：

Stenarson, J ^{[1
]}

Garcia, M

Angelov, I

Zirath, H

机构：

[1] Chalmers Univ Technol, Dept Microwave Technol, S-41296 Gothenburg, Sweden

[2] Raytheon Microelect, Andover, MA 01810 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 12期

关键词：

FET noise model; nodal analysis; noise model extraction; noise parameter;

D O I：

10.1109/22.808982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general direct extraction procedure for transistor noise models that includes two correlated noise sources is developed, Using direct extraction methods instead of optimization make it possible to study the frequency dependence of the model parameters. The extraction procedure is demonstrated for a silicon carbide MESFET, using both PRC and Pospieszalski models. The extracted models show good agreement with measured noise parameters.

引用

页码：2358 / 2363

页数：6

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