A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

被引：6
|
作者：
Wang, Longyan [1 ]
Sun, Lei [1 ]
Han, Dedong [1 ]
Wang, Yi [1 ]
Chan, Mansun [2 ]
Zhang, Shengdong [1 ,3 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[3] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2014年 / 10卷 / 04期
基金：
美国国家科学基金会;
关键词：
Active-matrix organic light-emitting diode (AMOLED); amorphous silicon (a-Si); metal-induced lateral crystallization (MILC); polycrystalline silicon (poly-Si); thin film transistor (TFT); THIN-FILM TRANSISTORS; PERFORMANCE; POLYSILICON; HYDROGENATION; DISPLAYS; DRIVER;
D O I：
10.1109/JDT.2014.2301554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.
引用
收藏
页码：317 / 320
页数：4
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