Photoluminescence properties of Mg-doped InN nanowires

被引：15
作者：
Zhao, Songrui [1 ]
Liu, Xuedong [1 ]
Mi, Zetian [1 ]
机构：
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 20期
基金：
加拿大自然科学与工程研究理事会;
关键词：
GAN; BAND; EPITAXY; ENERGY;
D O I：
10.1063/1.4831895
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, photoluminescence (PL) properties of nearly defect-free Mg-doped InN nanowires were investigated in detail. The low-doped sample exhibits two PL emission peaks up to 152 K, which can be ascribed to the band-to-band recombination and the Mg-acceptor energy level related recombination, respectively. For the high-doped sample, the Mg-acceptor energy level related transition dominates. Detailed power dependent PL studies further indicate that the Mg-acceptor energy level related PL emission is due to the donor-acceptor pair recombination process, which subsequently evolves into the free-to-acceptor recombination with increasing temperature. (C) 2013 AIP Publishing LLC.
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页数：4
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