Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

被引：44

作者：

Coulon, P. M. ^{[1
,2
]}

Mexis, M. ^{[1
]}

Teisseire, M. ^{[1
]}

Jublot, M. ^{[3
]}

Vennegues, P. ^{[1
]}

Leroux, M. ^{[1
]}

Zuniga-Perez, J. ^{[1
]}

机构：

[1] CRHEA CNRS, F-06560 Valbonne, France

[2] Univ Nice Sophia Antipolis UNS, F-06103 Nice, France

[3] Fac Sci St Jerome CP2M, F-13397 Marseille, France

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 15期

关键词：

MOLECULAR-BEAM EPITAXY; FACE ALGAN/GAN HETEROSTRUCTURES; 2-DIMENSIONAL ELECTRON GASES; DOPED GAN; YELLOW LUMINESCENCE; 0001; SAPPHIRE; LATERAL OVERGROWTH; INVERSION DOMAIN; STACKING-FAULTS; FILM GROWTH;

D O I：

10.1063/1.4870950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity. (C) 2014 AIP Publishing LLC.

引用

页数：9

共 64 条

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