Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution

被引：146

作者：

Kim, Kyoung-Kook ^{[1
]}

Lee, Sam-dong ^{[2
]}

Kim, Hyunsoo ^{[1
]}

Park, Jae-Chul ^{[1
]}

Lee, Sung-Nam ^{[3
]}

Park, Youngsoo ^{[1
]}

Park, Seong-Ju ^{[4
]}

Kim, Sang-Woo ^{[2
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, Suwon 440600, South Korea

[2] Kumoh Natl Inst Technol, Sch Adv Mat & Syst Engn, Gumi 730701, Gyeongbuk, South Korea

[3] Silla Univ, Dept Engn Energy & Appl Chem, Pusan 617736, South Korea

[4] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 07期

关键词：

charge injection; electrodes; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; nanofabrication; nanostructured materials; rough surfaces; semiconductor growth; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3077606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a dramatic increase in the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode. ZnO nanorods were grown into aqueous solution at the low temperature of 90 degrees C. With 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was increased by about 57% with no increase in a forward voltage over the conventional LEDs with planar ITO. The increased light extraction by the ZnO nanorod arrays is due to the formation of sidewalls and a rough surface, resulting in a multiple photon scattering at the LED surface.

引用

页数：3

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