Si surface passivation by sulfur and reduction of interface defect recombination

被引：0

作者：

Das, Ujjwal ^{[1
]}

Jafari, Sahar ^{[2
]}

Zhang, Lei ^{[1
]}

Liu, Hsiang-Yu ^{[1
]}

Birkmire, Robert ^{[1
]}

Hegedus, Steven ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

[2] Anhalt Univ Appl Sci, Fraunhofer Ctr Silicon Photovolta CSP, Otto Eissfeldt Str 12, D-06120 Halle, Saale, Germany

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

基金：

美国国家科学基金会;

关键词：

H2S reaction; interface defects; n-type silicon; passivation charge; sulfur; surface passivation;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Excellent surface passivation of n-type Si is achieved by surface reaction in H2S at a temperature of 450 - 650 degrees C. X-ray photoelectron spectroscopy (XPS) analysis of the H2S reacted Si surface shows that effective minority carrier lifetime (tau(eff)) increases with increase of S concentration up to similar to 3% and stabilizes thereafter, indicative of an effective passivation by approximately a monolayer S coverage. Numerical fitting of injection level dependent lifetime curves indicate S reduces the interface defect states (D-it) to < 5x10(10) cm(-2) ev(-1) and introduces a positive passivation charge (Q(pass)) of > 1x10(11) cm(-2) leading to greatly reduced interface defect recombination.

引用

页码：3076 / 3079

页数：4

共 9 条

[1] Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole [J].