Optindzation of dielectric cap adhesion to ultra-low-k dielectrics

被引：0

作者：

Spencer, G ^{[1
]}

Soyemi, A ^{[1
]}

Junker, K ^{[1
]}

Vires, J ^{[1
]}

Turner, M ^{[1
]}

Kirksey, S ^{[1
]}

Sieloff, D ^{[1
]}

Ramani, N ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Austin, TX 78721 USA

来源：

MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004 | 2004年 / 812卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the adhesion of CVD dielectric caps to ULK MSQ spin-on dielectric materials with k values of 2.2 and 2.0, and a ULK CVD material with a k value of 2.7 is presented. A substantial improvement in cap adhesion to both the k2.2 ULK MSQ and the k2.7 ULK CVD material is demonstrated. ne improvement is obtained using a low-k CVD glue material between the ULK dielectric and the subsequent cap material and/or by optimizing the CVD cap film deposition. Four-point bend measurement of adhesion strength is used to quantify the improvement in interface adhesion. The improvement in CVD cap adhesion is demonstrated to be strongly dependent upon both the glue layer film and the cap deposition conditions. While optimization of the CVD cap materials results in adequate adhesion for the k2.2 ULK MSQ, these improvements are demonstrated not to extend to the k2.0 ULK MSQ film.

引用

页码：117 / 122

页数：6

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