Nucleation kinetics of diamond in hot filament chemical vapor deposition

被引：4
|
作者：
Yu, J [1 ]
Huang, RF [1 ]
Wen, LS [1 ]
Shi, CX [1 ]
机构：
[1] Chinese Acad Sci, Inst Met Res, Shenyang 110015, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 1999年 / 34卷 / 14-15期
基金：
中国国家自然科学基金;
关键词：
thin films; vapor deposition;
D O I：
10.1016/S0025-5408(00)00160-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond nucleation on (111)-oriented monocrystalline silicon wafer was investigated by hot filament chemical vapor deposition (HFCVD). The variation of nucleation density with time was determined. For a lower gas flow rate, the nucleation density-time curve comprises two parts, which represent the nucleation at surface defects and smoothly intact surface sites. For a higher gas flow rate, the distinction between the two parts in the curve tends to vanish. Diamond nucleation was enhanced by increasing the gas flow rate. (C) 2000 Elsevier Science Ltd.
引用
收藏
页码：2319 / 2325
页数：7
相关论文
共 50 条
  • [41] DIAMOND HOMOEPITAXY BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
    AVIGAL, Y
    UZANSAGUY, C
    KALISH, R
    LEREAH, Y
    DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 462 - 467
  • [42] Nano crystalline diamond synthesized by hot filament chemical vapor deposition
    Hirai, Takayuki
    Kanno, Yoshinori
    Takagi, Yoshiki
    DIAMOND ELECTRONICS - FUNDAMENTALS TO APPLICATIONS, 2007, 956 : 165 - +
  • [43] Electric degradation behavior of hot filament in diamond chemical vapor deposition
    Chen, GC
    Huang, RF
    Wen, LS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 3108 - 3110
  • [44] Gas temperature in a hot filament diamond chemical vapor deposition system
    Menningen, KL
    Childs, MA
    Anderson, LW
    Lawler, JE
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (04): : 1546 - 1554
  • [45] Study of diamond films prepared by hot filament chemical vapor deposition
    Kromka, A
    Malcher, V
    Janík, J
    Dubravcová, V
    Satka, A
    Cerven, I
    ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS, 2000, : 299 - 302
  • [46] HOT - FILAMENT CHEMICAL-VAPOR-DEPOSITION TECHNIQUE FOR DIAMOND FILMS
    IYER, SB
    METALS MATERIALS AND PROCESSES, 1994, 5 (04): : 247 - 258
  • [47] DIAMOND NUCLEATION BY CARBON-FIBERS ON UNSCRATCHED SUBSTRATE BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
    NAKAMURA, Y
    TAMAKI, K
    WATANABE, Y
    HIRAYAMA, S
    JOURNAL OF MATERIALS RESEARCH, 1994, 9 (07) : 1619 - 1621
  • [48] NUCLEATION AND GROWTH OF DIAMOND ON FESI2/SI SUBSTRATES BY HOT FILAMENT CHEMICAL VAPOR-DEPOSITION
    GODBOLE, VP
    NARAYAN, J
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) : 4944 - 4948
  • [49] EFFECT OF REACTION PRESSURE ON THE NUCLEATION BEHAVIOR OF DIAMOND SYNTHESIZED BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
    KIM, DG
    LEE, HC
    LEE, JY
    JOURNAL OF MATERIALS SCIENCE, 1993, 28 (24) : 6704 - 6708
  • [50] Bias enhanced nucleation and bias textured growth of diamond on silicon(100) in hot filament chemical vapor deposition
    Huang, JT
    Yeh, WY
    Hwang, J
    Chang, H
    THIN SOLID FILMS, 1998, 315 (1-2) : 35 - 39
12345