Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

被引：88
|
作者：
Liu, CW [1 ]
Lee, MH [1 ]
Chen, MJ [1 ]
Lin, IC [1 ]
Lin, CF [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期
关键词：
D O I：
10.1063/1.126081
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction. (C) 2000 American Institute of Physics. [S0003-6951(00)04512-5].
引用
收藏
页码：1516 / 1518
页数：3
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