Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors

被引：2
|
作者：
Lebedev, ÉA [1 ]
Tséndin, KD [1 ]
Kazakova, LP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 01期
关键词：
Radiation; Phase Transition; Laser Radiation; Pulse Duration; Magnetic Material;
D O I：
10.1134/1.1187961
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown that the minimum power of an electric field which induces the crystal-glass phase transition in micrometer-thick films of chalcogenide semiconductors does not depend on pulse duration tau for tau > 10 mu s and increases, as tau decreases to tau < 1-3 mu s. The dependence obtained is similar to that observed for crystal-glass phase transition induced by pulses of laser radiation. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：95 / 97
页数：3
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