Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors

被引：2

作者：

Lebedev, ÉA ^{[1
]}

Tséndin, KD ^{[1
]}

Kazakova, LP ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 01期

关键词：

Radiation; Phase Transition; Laser Radiation; Pulse Duration; Magnetic Material;

D O I：

10.1134/1.1187961

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the minimum power of an electric field which induces the crystal-glass phase transition in micrometer-thick films of chalcogenide semiconductors does not depend on pulse duration tau for tau > 10 mu s and increases, as tau decreases to tau < 1-3 mu s. The dependence obtained is similar to that observed for crystal-glass phase transition induced by pulses of laser radiation. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：95 / 97

页数：3

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