The effects of interfacial interactions between Fe-O and Fe-Si induced by ion-beam bombardment on the magnetic properties of Si-oxide/Fe bilayers

被引：7
作者：
Li, X. [1 ]
Lin, K. -W. [2 ]
Liang, H. -T. [2 ]
Hsu, H. -F. [2 ]
Galkin, N. G. [3 ]
Wroczynskyj, Y. [4 ]
van Lierop, J. [4 ]
Pong, P. W. T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan
[3] FEB RAS, Inst Automat & Control Proc, Vladivostok 690041, Russia
[4] Univ Manitoba, Dept Phys & Astron, Winnipeg, MB R3T 2N2, Canada
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 365卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Ion-beam bombardment; Interface; Si-oxide/Fe bilayers; Thin film magnetism; THIN-FILMS; GROWTH; SPECTROSCOPY; MIXTURES; FE/SI; XPS;
D O I：
10.1016/j.nimb.2015.07.087
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Si/Fe and SiO2/Fe thin-film heterostructures are commonly seen in magnetic multilayer devices, whose magnetic properties are strongly influenced by intermixing at the interfaces. In this paper, Si-oxide/Fe bilayers were formed by depositing Si on Fe with in situ O-2/Ar ion-beam bombardment during the Si deposition. The surface oxidation conditions were altered by applying different O-2/Ar ratios (0-41%) in the ion-beam. The surface and cross-sectional morphologies, and the crystalline structures were characterized by transmission electron microscopy. The formation of Fe-O, Fe-Si and Si-O bonds at the interface of the O-2/Ar ion-beam bombarded Si-oxide/Fe bilayers was evidenced by X-ray photoemission spectra. FeO, Fe3O4 and Fe2O3 at the interface resulted in a marked increase in the magnetic coercivity at low temperatures, as characterized by magnetometry. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：196 / 201
页数：6
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