Analog resistive switching behavior of Al/Nb2O5/Al device

被引：33

作者：

Maehne, H. ^{[1
]}

Wylezich, H. ^{[1
]}

Hanzig, F. ^{[2
]}

Slesazeck, S. ^{[1
]}

Rafaja, D. ^{[2
]}

Mikolajick, T. ^{[1
,3
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Tech Univ Bergakad Freiberg, Inst Mat Sci, D-09599 Freiberg, Germany

[3] Tech Univ Dresden, Chair Nanoelect Mat, D-01187 Dresden, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 10期

关键词：

niobium pentoxide; RRAM; memristor; analog switching; resistive switching; platinum-free; MEMORIES;

D O I：

10.1088/0268-1242/29/10/104002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive switching effects in metal-insulator-metal (MIM) structures are strongly influenced by the electrode materials. In this work a platinum-free symmetric Al/Nb2O5/Al device is compared to a device with platinum bottom electrode. For the device with the platinum bottom electrode, filamentary based resistive switching with good data retention was observed up to 125 degrees C. For the Al/Nb2O5/Al device, an area dependent pure electronic based resistive switching was observed. Electron trapping at the bottom electrode interface is responsible for the observed analog switching behavior which makes an Al/Nb2O5/Al device suitable for neuromorphic applications.

引用

页数：6

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