Nanoscale FeS2 (Pyrite) as a Sustainable Thermoelectric Material

被引:34
|
作者
Uhlig, Christian [1 ]
Guenes, Ekrem [1 ]
Schulze, Anne S. [1 ]
Elm, Matthias T. [2 ]
Klar, Peter J. [2 ]
Schlecht, Sabine [1 ]
机构
[1] Univ Giessen, Inst Inorgan & Analyt Chem, D-35392 Giessen, Germany
[2] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany
关键词
Thermoelectric; pyrite; FeS2; mechanical alloying; doping; THIN-FILMS; TRANSPORT-PROPERTIES; SINGLE-CRYSTALS; SOLID SOLUTIONS; NANOCRYSTALS; GROWTH; NANOPARTICLES; DEPOSITION; SELENIUM; CO;
D O I
10.1007/s11664-014-3065-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have synthesized undoped, Co-doped (up to 5%), and Se-doped (up to 4%) FeS2 materials by mechanical alloying in a planetary ball mill and investigated their thermoelectric properties from room temperature (RT) to 600 K. With decreasing particle size, the undoped FeS2 samples showed higher electrical conductivity, from 0.02 S cm(-1) for particles with 70 nm grain size up to 3.1 S cm(-1) for the sample with grain size of 16 nm. The Seebeck coefficient of the undoped samples showed a decrease with further grinding, from 128 mu V K-1 at RT for the sample with 70-nm grains down to 101 mu V K-1 for the sample with grain size of 16 nm. The thermal conductivity of the 16-nm undoped sample lay within the range from 1.3 W m(-1) K-1 at RT to a minimal value of 1.2 W m(-1) K-1 at 600 K. All doped samples showed improved thermoelectric behavior at 600 K compared with the undoped sample with 16 nm particle size. Cobalt doping modified the p-type semiconducting behavior to n-type and increased the thermal conductivity (2.1 W m(-1) K-1) but improved the electrical conductivity (41 S cm(-1)) and Seebeck coefficient (-129 mu V K-1). Isovalent selenium doping led to a slightly higher thermal conductivity (1.7 W m(-1) K-1) as well as to an improved electrical conductivity (26 S cm(-1)) and Seebeck coefficient (110 mu V K-1). The ZT value of FeS2 was increased by a factor of five by Co doping and by a factor of three by Se doping.
引用
收藏
页码:2362 / 2370
页数:9
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