Effect of substrate annealing on the quality of pulsed laser deposited Zn1-xMgxO thin films

被引：7
|
作者：
Shukla, Gaurav [1 ]
Khare, Alika [1 ]
机构：
[1] Indian Inst Technol Guwahati, Laser & Photon Lab, Dept Phys, Gauhati 781039, India
来源：
APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 15期
关键词：
Thin films; Deposition; Epitaxial growth; SAPPHIRE SUBSTRATE; SURFACE; RECONSTRUCTION; REALIZATION; MGXZN1-XO; DETECTOR; EPITAXY; ALLOY; ZNO;
D O I：
10.1016/j.apsusc.2009.03.033
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The annealing effects of sapphire substrate before deposition on the quality of epitaxial Zn1-xMgxO thin films grown by pulsed laser deposition are reported. Our Experimental results indicate that the surface quality of Zn1-xMgxO thin films and hexagonal columnar growth is improved on the annealed sapphire substrate at high temperatures due to formation of atomic terraces on the substrate surface. The photoluminescence signals also increases with the increasing annealing temperature of the substrate. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：7017 / 7020
页数：4
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