NONVOLATILE MEMORY PROPERTY OF WSI2 AND TISI2 NANO-PARTICLES IN SIO2 DIELECTRICS

被引：0

作者：

Seo, Ki Bong ^{[1
]}

Han, Seung Jong ^{[1
]}

Lee, Dong Uk ^{[1
]}

Kim, Seon Pil ^{[1
]}

Kim, Eun Kyu ^{[1
]}

机构：

[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea

来源：

TMS 2009 138TH ANNUAL MEETING & EXHIBITION - SUPPLEMENTAL PROCEEDINGS, VOL 3: GENERAL PAPER SELECTIONS | 2009年

关键词：

Nano-particles; Nano-floating gate memory; WSi2; TiSi2; Nonvolatile memory; METAL NANOCRYSTAL MEMORIES; ELECTRICAL CHARACTERIZATION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated the nano-floating gate capacitors with WSi2 and TiSi2 nano-particles embedded in the SiO2 dielectrics. The WSi2 and TiSi2 nano-particles were created from metal silicide films during rapid thermal annealing process, and they have spherical shapes with diameters of 2 similar to 5 nm. The electrical properties of the WSi2 and TiSi2 nano-particles were characterized by using capacitance-voltage measurement. Then, the flat-band voltage shift due to the charging effect Of WSi2 and TiSi2 nano-particles were measured about 4.37 V and 4.23 V, respectively, when the bias voltages were swept from -7 V to +7 V. And, their memory windows were decreased from 2.4 V to 1.6 V and 2.7 V to 1 V, respectively, after 1 hr. It showed that the nano-floating gate capacitors with WSi2 and TiSi2 nano-particles have a feasibility of application to nonvolatile memory devices.

引用

页码：11 / +

页数：3

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