(Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire: Polar vs. non-polar

被引：19

作者：

Chauveau, J. -M. ^{[1
,2
]}

Morhain, C. ^{[1
]}

Teisseire, M. ^{[1
]}

Lauegt, M. ^{[1
]}

Deparis, C. ^{[1
]}

Zuniga-Perez, J. ^{[1
,2
]}

Vinter, B. ^{[1
,2
]}

机构：

[1] CRHA CNRS, F-06560 Valbonne, Sophia Antipoli, France

[2] Univ Nice Sophia Antipolis, Dept Phys, F-06103 Nice, France

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期

关键词：

ZnO; Non-polar; Quantum wells; QUANTUM-WELL HETEROSTRUCTURES; ZNO; (0001)-SAPPHIRE; ALLOYS; MODES; LASER;

D O I：

10.1016/j.mejo.2008.06.067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide (ZnO) has recently attracted considerable attention because of its unique physical properties and its potential applications in the blue and UV spectral range. Up to now, ZnO-based heterostructures have mostly been grown in a c-orientation. The growth of non-polar layers along the a-direction [11 (2) over bar0] has been proposed to avoid any built-in electric fields in the c-direction. Polar and non-polar quantum wells (QWs) embedded in (Zn, Mg)O barriers were grown on an optimized buffer. We compare the photoluminescence (PL) emission of a- and c-oriented QWs. From this comparison, we demonstrate that the QWs exhibit confinement but no indication of quantum confined Stark effect, contrary to what is observed in c-oriented structures. In the non-polar orientation, it is shown that the thermal quenching is not related to the thermal escape of excitons from the ZnO area, since the calculated activation energies are much lower. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：512 / 516

页数：5

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