Deposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques

被引：13

作者：

Manhabosco, Taise Matte ^{[1
]}

Mueller, Iduvirges L. ^{[1
]}

机构：

[1] Univ Fed Rio Grande do Sul, Lab Corros Res, Dept Met, BR-91501970 Porto Alegre, RS, Brazil

来源：

JOURNAL OF MATERIALS SCIENCE | 2009年 / 44卷 / 11期

关键词：

MAGNETIC-PROPERTIES; GIANT MAGNETORESISTANCE; ELECTRODEPOSITION; GROWTH; COERCIVITY; MORPHOLOGY; SACCHARIN; SURFACES; METALS;

D O I：

10.1007/s10853-009-3388-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, thin cobalt films were electrodeposited directly onto n-Si (100) using two different electrodeposition techniques: galvanostatic and potentiostatic. The morphological difference between galvanostatic and potentiostatic deposits was observed by atomic force microscopy (AFM) and X-ray diffraction (XRD). Analysis of the deposits by an alternating gradient field magnetometer (AGFM) showed the influence of the electrodeposition process on the magnetic properties of the film.

引用

页码：2931 / 2937

页数：7

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