Properties of carbon nitride (CNx) films deposited by a high-density plasma ion plating method

被引：11

作者：

Chen, LY ^{[1
]}

Cheng, CY ^{[1
]}

Hong, FCN ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan, Taiwan

来源：

关键词：

carbon nitride; optical emission spectroscopy; Raman; internal stress;

D O I：

10.1016/S0925-9635(01)00583-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nitride (CNx) films have been deposited in a hollow cathode are (HCA) ion plating system with a high-density plasma, including a high degree of dissociation of nitrogen. Optical emission spectra (OES) were obtained to characterize the Ar/N-2 plasma during the deposition of carbon nitride films. The species identified include C-2, N-2, N-2(+) and CN. The variations of the OES spectra with pressure are correlated with film growth behavior. The films deposited on Si (100) substrates were characterized by FTIR. Raman, and SEM. Single, double and triple carbon nitride bonds were detected in the FTIR spectra, and the relative intensifies of the associated bands were dependent on the pressure and the substrate bias. Raman spectra showed an increase of the sp(2) carbon phase in carbon nitride films with the increase of pressure and the substrate bias. The internal stresses were measured by substrate bending using the Stoney equation. The internal stress of carbon nitride films was observed to depend mainly on the substrate bias. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1172 / 1177

页数：6

共 18 条

[1] Preparation of amorphous CNx thin films by pulsed laser deposition using a radio frequency radical beam source [J].