Hopping transport in SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures

被引：4

作者：

Thoutam, Laxman Raju ^{[1
]}

Yue, Jin ^{[1
]}

Xu, Peng ^{[1
]}

Jalan, Bharat ^{[1
]}

机构：

[1] Univ Minnesota Twin Cities, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW MATERIALS | 2019年 / 3卷 / 06期

基金：

美国国家科学基金会;

关键词：

QUANTUM INTERFERENCE; MAGNETORESISTANCE; CONDUCTION; SPIN;

D O I：

10.1103/PhysRevMaterials.3.065006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. These findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.

引用

页数：5