Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

被引：6

作者：

Hoek, M. ^{[1
,2
]}

Coneri, F. ^{[1
,2
]}

Leusink, D. P. ^{[1
,2
]}

Eerkes, P. D. ^{[1
,2
]}

Wang, X. Renshaw ^{[1
,2
]}

Hilgenkamp, H. ^{[1
,2
,3
]}

机构：

[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[3] Leiden Univ, NL-2300 RA Leiden, Netherlands

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2014年 / 27卷 / 04期

关键词：

cuprate superconductors; material synthesis; electron doped; thin films; transport properties; TRANSPORT-PROPERTIES; DIFFRACTION;

D O I：

10.1088/0953-2048/27/4/044017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic. (Nd, Ce)(2)O-3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

引用

页数：6

共 3 条

[1] Electric noise properties of optimally doped Nd1.85Ce0.15CuO4 superconducting thin films
Barone, C.
Pagano, S.
Guarino, A.
Nigro, A.
Vecchione, A.
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2011, 24 (08)
[2] The effect of substrate and annealing temperatures on the microstructure of La1.85Sr0.15CuO4 thin film in pulsed electron deposition process
Chen, L. M.
Liu, W. T.
Zeng, F. G.
Guo, Y. F.
Li, P. G.
Tang, W. H.
JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 456 (1-2) : 286 - 289
[3] Pulsed-laser deposition of Pr2-xCexCuO4-y thin films and the effect of high-temperature post-annealing
Maiser, E
Fournier, P
Peng, JL
Araujo-Moreira, FM
Venkatesan, T
Greene, RL
Czjzek, G
PHYSICA C, 1998, 297 (1-2): : 15 - 22

← 1 →