A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process

被引:143
作者
Ferreira, Luis H. C. [1 ]
Sonkusale, Sameer R. [2 ]
机构
[1] Univ Fed Itajuba, Syst Engn & Informat Technol Inst, BR-37500903 Itajuba, Brazil
[2] Tufts Univ, Nanoscale Integrated Sensors & Circuits Lab, Medford, MA 02155 USA
关键词
Bulk-driven Miller OTA; halo-implanted transistors; low-power applications; low-voltage; weak inversion; PERFORMANCE; CIRCUITS; OPAMP;
D O I
10.1109/TCSI.2013.2289413
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a 60-dB gain bulk-driven Miller OTA operating at 0.25-V power supply in the 130-nm digital CMOS process. The amplifier operates in the weak-inversion region with input bulk-driven differential pair sporting positive feedback source degeneration for transconductance enhancement. In addition, the distributed layout configuration is used for all the transistors to mitigate the effect of halo implants for higher output impedance. Combining these two approaches, we experimentally demonstrate a high gain of over 60-dB with just 18-nW power consumption from 0.25-V power supply. The use of enhanced bulk-driven differential pair and distributed layout can help overcome some of the constraints imposed by nanometer CMOS process for high performance analog circuits in weak inversion region.
引用
收藏
页码:1609 / 1617
页数:9
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