Fabrication of (Tb, Gd)3Al5O12:Ce3+ phosphor ceramics for warm white light-emitting diodes application

被引：39

作者：

Chen, Jie ^{[1
,2
]}

Tang, Yanru ^{[1
]}

Yi, Xuezhuan ^{[1
]}

Tian, Yanna ^{[1
,2
]}

Ao, Gang ^{[1
,3
]}

Hao, Deming ^{[1
,2
]}

Lin, Yandan ^{[4
]}

Zhou, Shengming ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Lab Micronano Optoelect Mat & Devices, Shanghai 201800, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Shanghai Tech Univ, Shanghai 201210, Peoples R China

[4] Fudan Univ, Inst Elect Light Sources, Sch Informat Sci & Technol, Dept Illuminat Engn & Light Sources, Shanghai 200433, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2019年 / 9卷 / 08期

基金：

国家重点研发计划;

关键词：

GARNET PHOSPHORS; ENERGY-TRANSFER; LUMINESCENCE; TEMPERATURE; EFFICIENCY; POWDER; IONS;

D O I：

10.1364/OME.9.003333

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Tb, Gd)(3)Al5O12:Ce3+ (Ce: TGAG) transparent phosphor ceramics with different concentrations of Gd-doping were fabricated for the first time through a solid state reaction. The maximum emission peak of Ce3+ shifts from 550 nm to 570 nm in Ce: TGAG and the emission intensity of Ce3+ was also greatly increased. With an increasing red component in fluorescence spectrum, a low color correlated temperature (CCT) of 3681 K and a high color-rendering index (CRI) of 74.7 were obtained in the packed LED device based on InGaN chips and Ce: TGAG ceramics at the Gd-doping concentration of 30%, which indicates the great potential of Ce: TGAG ceramics in the application of warm white light illumination. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：3333 / 3341

页数：9

共 28 条

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