Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature

被引:36
作者
Abell, J. [1 ]
Kim, C. S. [1 ]
Bewley, W. W. [1 ]
Merritt, C. D. [1 ]
Canedy, C. L. [1 ]
Vurgaftman, I. [1 ]
Meyer, J. R. [1 ]
Kim, M. [2 ]
机构
[1] Naval Res Lab, Washington, DC 20375 USA
[2] Sotera Def Solut Inc, Columbia, MD 21046 USA
关键词
MU-M; SPECTRAL RANGE; LASERS; PERFORMANCE; DIODES; ARRAY; LEDS;
D O I
10.1063/1.4886394
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate incoherent light emission peaked at lambda = 3.3 mu m from a 15-stage interband cascade active region. The interband cascade light emitting devices with mesa diameters ranging from 50 to 400 mu m were mounted epitaxial-side-down, and light was extracted from the substrate side. At an applied bias of 8.7V and injection current of 0.6 A, and without any measures taken to improve the poor out-coupling efficiency caused by total internal reflection, a 400-mu m-diameter device produced 1.6 mW of continuous-wave output power at T = 25 degrees C. Mesas with smaller diameters displayed emission intensities as high as 1.7 W/cm(2). (C) 2014 AIP Publishing LLC.
引用
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页数:4
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共 25 条
[1]   High-power, high-brightness continuous-wave interband cascade lasers with tapered ridges [J].
Bewley, W. W. ;
Kim, C. S. ;
Canedy, C. L. ;
Merritt, C. D. ;
Vurgaftman, I. ;
Abell, J. ;
Meyer, J. R. ;
Kim, M. .
APPLIED PHYSICS LETTERS, 2013, 103 (11)
[2]   High-power, narrow-ridge, mid-infrared interband cascade lasers [J].
Canedy, C. L. ;
Kim, C. S. ;
Kim, M. ;
Larrabee, D. C. ;
Nolde, J. A. ;
Bewley, W. W. ;
Vurgaftman, I. ;
Meyer, J. R. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03) :1160-1162
[3]   Pulsed and CW performance of 7-stage interband cascade lasers [J].
Canedy, Chadwick L. ;
Abell, Joshua ;
Merritt, Charles D. ;
Bewley, William W. ;
Kim, Chul Soo ;
Kim, Mijin ;
Vurgaftman, Igor ;
Meyer, Jerry R. .
OPTICS EXPRESS, 2014, 22 (07) :7702-7710
[4]   Light-emitting diodes based on GaSb alloys for the 1.6-4.4 μm mid-infrared spectral range [J].
Danilova, TN ;
Zhurtanov, BE ;
Imenkov, AN ;
Yakovlev, YP .
SEMICONDUCTORS, 2005, 39 (11) :1235-1266
[5]   Increase in midwave infrared light emitting diode light output due to substrate thinning and texturing [J].
Das, N. C. .
APPLIED PHYSICS LETTERS, 2007, 90 (01)
[6]   Enhanced Performance of LWIR LED Devices by Backside Thinning and Isolating the Pixels [J].
Das, Naresh C. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) :1209-1211
[7]   High emissive power MWIR LED array [J].
Das, NC ;
Olver, K ;
Towner, F .
SOLID-STATE ELECTRONICS, 2005, 49 (08) :1422-1427
[8]   LEDs (λmax=3.6 μm) with cone-shaped light-emitting surfaces [J].
Grebenshchikova, E. A. ;
Golovin, A. S. ;
Imenkov, A. N. ;
Kizhaev, S. S. ;
Yakovlev, Yu. P. .
TECHNICAL PHYSICS LETTERS, 2010, 36 (02) :144-147
[9]   Temperature dependence of 4.1 μm mid-infrared type II "W" interband cascade lasers [J].
Ikyo, B. A. ;
Marko, I. P. ;
Adams, A. R. ;
Sweeney, S. J. ;
Canedy, C. L. ;
Vurgaftman, I. ;
Kim, C. S. ;
Kim, M. ;
Bewley, W. W. ;
Meyer, J. R. .
APPLIED PHYSICS LETTERS, 2011, 99 (02)
[10]   Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes [J].
Jung, Seungyong ;
Suchalkin, Sergey ;
Kipshidze, Gela ;
Westerfeld, David ;
Golden, Eric ;
Snyder, Donald ;
Belenky, Gregory .
APPLIED PHYSICS LETTERS, 2010, 96 (19)