Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon

被引：5
作者：
Giannazzo, F
Goghero, D
Raineri, V
Mirabella, S
Priolo, F
Liotta, SF
Rinaudo, S
机构：
[1] INFM, I-95123 Catania, Italy
[2] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
[3] CNR, IMM, I-95121 Catania, Italy
[4] STMicroelect, I-95121 Catania, Italy
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词：
D O I：
10.1116/1.1622671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning capacitance microscopy (SCM) has been performed both in cross-sectional and in angle-beveling configurations on ultranarrow B spikes with a full width at the half maximum smaller than the SCM probe diameter. A relevant improvement in the SCM response has been observed passing from the cross section to ten times magnification, but a peculiar asymmetric shape characterizes all the profiles on the beveling configuration and broadening and peak lowering are observed for the narrowest spikes. Accurate two-dimensional simulations allowed us to reproduce the experimentally observed peculiar phenomena. (C) 2004 American Vacuum Society.
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收藏
页码：394 / 398
页数：5
相关论文
共 12 条
[1]   Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n+-p samples [J].
Ciampolini, L ;
Giannazzo, F ;
Ciappa, M ;
Fichtner, W ;
Raineri, V .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) :85-88
[2]   High-resolution scanning capacitance microscopy of silicon devices by surface beveling [J].
Giannazzo, F ;
Priolo, F ;
Raineri, V ;
Privitera, V .
APPLIED PHYSICS LETTERS, 2000, 76 (18) :2565-2567
[3]   Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy [J].
Goghero, D ;
Raineri, V ;
Giannazzo, F .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1824-1826
[4]  
*ISE TCAD, 2002, DESS REF MAN
[5]   TECHNIQUES FOR SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR-DEVICES [J].
LAUX, SE .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) :472-481
[6]  
LUNDSTROM M, 2000, FOUNDAMENTALS CARRIE
[7]  
McBride DE, 2001, AIP CONF PROC, V550, P657, DOI 10.1063/1.1354472
[8]  
Selberherr S., 1984, ANAL SIMULATION SEMI
[9]  
SMOLINER J, 1998, APPL PHYS LETT, V73, P2597
[10]   Contrast reversal in scanning capacitance microscopy imaging [J].
Stephenson, R ;
Verhulst, A ;
De Wolf, P ;
Caymax, M ;
Vandervorst, W .
APPLIED PHYSICS LETTERS, 1998, 73 (18) :2597-2599
12