A LOW POWER LC-TANK SiGe BiCMOS INJECTION LOCKED FREQUENCY DIVIDER

被引：2

作者：

Jang, Sheng-Lyang ^{[1
]}

Wun, Jyun-Yan ^{[1
]}

Liu, Cheng-Chen ^{[1
]}

Juang, Miin-Horng ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Sect 4, Taipei 106, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 08期

关键词：

SiGe HBT BiCMOS; divide-by-4/-2; injection-locked frequency divider; low power; dual-injection; LC tank oscillator; BIPOLAR TECHNOLOGY;

D O I：

10.1002/mop.24470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An LC-tank injection locked frequency divider (ILFD) is proposed, and the ILFDs with a direct-injection MOSFET and a tail-injection HBT were implemented in the 0.35 mu m SiGe 3P3M BiCMOS technology. Measurement results show that when the tuning voltage is tuned from 0 V to 1.8 V, the free-running oscillation frequency of ILFD is tunable front 2.29 GHz to 2.94 GHz, and at the incident power of 0 dBm the divide-by-2/(4) operation range is from the incident frequency 4.2 to 6.7/(9.06 to 11.96) GHz. The core power consumption is 2.6 mW at V-dd = 1.1 V. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1970-1973, 2009: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24470

引用

页码：1970 / 1973

页数：4

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