Relaxation of misfit-induced stress in nitride-based heterostructures

被引：9
作者：
Terao, S
Iwaya, M
Sano, T
Nakamura, T
Kamiyama, S
Amano, H
Akasaki, I
机构：
[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期
基金：
日本学术振兴会;
关键词：
X-ray diffraction; roughening; stresses; metalorganic vapour phase epitaxy; nitrides;
D O I：
10.1016/S0022-0248(01)02009-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Relaxation processes of misfit-induced stress in GaN/AlyGa1-yN and AlxGa1-xN/AlyGa1-yN structures (x > y) were Studied. In case of GaN on relaxed AlyGa1-yN, relaxation of compressive-stress occurs in a very early stage oft lie GaN growth, while in case of AlyGa1-yN on AlxGa1-xN (x > y), tensile-stress relaxation does not Occur until the catastrophic relaxation by fracture formation. Surface roughness of the GaN grown on AlyGa1-yN can be suppressed by doping with Mg. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：947 / 950
页数：4
相关论文
共 11 条
[1]  
AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517
[2]   Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].
Akasaki, I ;
Amano, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408
[3]   GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE [J].
AMANO, H ;
KITOH, M ;
HIRAMATSU, K ;
AKASAKI, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) :1639-1641
[4]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[5]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[6]  
Haffouz S, 1998, MRS INTERNET J N S R, V3, part. no.
[7]   PREPARATION OF ALXGA1-XN/GAN HETEROSTRUCTURE BY MOVPE [J].
ITO, K ;
HIRAMATSU, K ;
AMANO, H ;
AKASAKI, I .
JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) :533-538
[8]   Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer [J].
Iwaya, M ;
Terao, S ;
Hayashi, N ;
Kashima, T ;
Amano, H ;
Akasaki, I .
APPLIED SURFACE SCIENCE, 2000, 159 :405-413
[9]   GAN GROWTH USING GAN BUFFER LAYER [J].
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707
[10]  
NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74
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