Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

被引：34

作者：

Drost, Robert ^{[1
]}

Kezilebieke, Shawulienu ^{[1
]}

Ervasti, Mikko M. ^{[2
]}

Hamalainen, Sampsa K. ^{[1
]}

Schulz, Fabian ^{[1
]}

Harju, Ari ^{[2
]}

Liljeroth, Peter ^{[1
]}

机构：

[1] Aalto Univ, Sch Sci, Dept Appl Phys, POB 15100, Aalto 00076, Finland

[2] Aalto Univ, Sch Sci, Dept Appl Phys, COMP Ctr Excellence, Aalto 00076, Finland

来源：

SCIENTIFIC REPORTS | 2015年 / 5卷

基金：

欧洲研究理事会; 芬兰科学院;

关键词：

MONOLAYER GRAPHITE; NI(111); HETEROSTRUCTURES; NANOROADS; GROWTH;

D O I：

10.1038/srep16741

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

引用

页数：8

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