Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias

We investigate the performance of 4H-SiC Schottky diodes with a p-guardring junction termination (Fig.1) at reverse bias. Experimental results suggest that interface charges located at the interface of the p-guardring and the boundary passivation may affect the device behavior. To this end, the blocking and breakdown behavior of Schottky diodes with and without interface charges taken into account is discussed in this paper.