High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

被引：4

作者：

Xu, S ^{[1
]}

Baiocchi, F ^{[1
]}

Safar, H ^{[1
]}

Lott, J ^{[1
]}

Shibib, A ^{[1
]}

Xie, Z ^{[1
]}

Nigam, T ^{[1
]}

Jones, B ^{[1
]}

Thompson, B ^{[1
]}

Desko, J ^{[1
]}

Gammel, P ^{[1
]}

机构：

[1] Agere Syst, Allentown, PA 18109 USA

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2004年 / 151卷 / 03期

关键词：

D O I：

10.1049/ip-cds:20040455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an RF LDMOSFET is demonstrated with excellent RF performance. It achieves high power gain of 14.5 db at a high power of 130 W at 2.1 GHz. Its high efficiency and linearity make it highly desirable in many applications. A substrate dimension of 2 ml enables the best-in-class thermal stability. Low hot carrier injection (HCI) degradation, integrated electrostatic discharge (ESD) structures and gold metal ensure good long-term reliability.

引用

页码：215 / 218

页数：4

共 5 条

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[5]

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