AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

被引：3
作者：
Tsai, JH
Cheng, SY
Laih, LW
Liu, WC
机构：
[1] Department of Electrical Engineering, National Cheng-Kung University, Tainan, I University Road
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 18期
关键词：
semiconductor quantum wells; heterojunction bipolar transistors;
D O I：
10.1049/el:19961096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) has been fabricated and demonstrated. Owing to the presence of the InGaAs/GaAs heterostructure base, a quantum well is formed between the emitter-base (E-B) junction. This may enhance the E-B valence band discontinuity (Delta E(nu)) and the confinement effect of minority carriers (holes) in the base region. Thus the emitter injection efficiency can be improved. A high current gain of 280 and an offset voltage lower than 100mV are obtained if the base metal is deposited on the lnGaAs base layer.
引用
收藏
页码：1720 / 1722
页数：3
相关论文
共 7 条
[1]   SELF-ALIGNED ALGAAS/GAAS HBT WITH SELECTIVELY REGROWN OMVPE EMITTER [J].
ENQUIST, PM ;
SLATER, DB ;
HUTCHBY, JA ;
MORRIS, AS ;
TREW, RJ .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (06) :295-297
[2]   HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ISHIBASHI, T ;
YAMAUCHI, Y ;
NAKAJIMA, O ;
NAGATA, K ;
ITO, H .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :194-196
[3]   AN IMPROVED HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR (HEBT) [J].
LIU, WC ;
LOUR, WS .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (09) :474-476
[4]   HIGH-CURRENT-GAIN GA-0.51IN-0.49P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
LU, SS ;
HUANG, CC .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :214-216
[5]   GSMBE GROWN (GAIN)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXHIBITING CURRENT GAINS UP TO 590 [J].
LU, SS ;
HUANG, CC .
ELECTRONICS LETTERS, 1992, 28 (04) :398-400
[6]   A HETEROJUNCTION BIPOLAR-TRANSISTOR WITH SEPARATE CARRIER INJECTION AND CONFINEMENT [J].
LUO, LF ;
EVANS, HL ;
YANG, ES .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1844-1846
[7]   COLLECTOR OFFSET VOLTAGE OF HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].
WON, T ;
IYER, S ;
AGARWALA, S ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :274-276
1