Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches

被引：35

作者：

Shi, Wei ^{[1
]}

Tian, Liqiang ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2387120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors analyze the periodicity and weakening surge of semi-insulating GaAs photoconductive semiconductor switches. It is shown that the periodicity and weakening surge of the output current wave form is caused by the self-excitation of the circuit. The electric field threshold E-T and the sustaining electric field E-s (the minimum electric field required to support the domain) are modulated by the ac electric field; the output wave form becomes two main modes of transelectron oscillator, namely, delayed domain mode and quenched domain mode. (c) 2006 American Institute of Physics.

引用

页数：3

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