Impact of Active Surface Area on Performance and Reliability of Tri-gate FinFET

被引：0

作者：

Yang, Yi-Lin ^{[1
]}

Chuang, Chiao-Feng ^{[2
]}

Lai, Chih-Jui ^{[1
]}

Zhang, Wenqi ^{[2
]}

Hsu, Yun-Hsuan ^{[2
]}

Tsai, Chia-Jung ^{[2
]}

Lin, Wei-De ^{[2
]}

Lin, Meng-Yen ^{[2
]}

Yeh, Wen-Kuan ^{[2
,3
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, 62 Shenjhong Rd, Kaohsiung 824, Taiwan

[2] Natl Univ Kaohsiung, Dept Elect Engn, 700 Kaohsiung Univ Rd, Kaohsiung 811, Taiwan

[3] Natl Appl Res Labs, Natl Nano Device Labs NDL, 26,Prosper Rd 1,Hsinchu Sci Pk, Hsinchu 300, Taiwan

来源：

SENSORS AND MATERIALS | 2019年 / 31卷 / 07期

关键词：

active surface area (SA); contact etch stop layer (CESL); FinFET;

D O I：

10.18494/SAM.2019.2209

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work, a contact etch stop layer (CESL) was found to cause tensile stress above the gate of FinFET devices, and the top tensile stress introduced compressive stress in the channel. With increasing active surface area (SA), a higher compressive stress was observed. The effect of compressive stress became more evident, resulting in a lower current but a higher reliability for nFinFET devices.

引用

页码：2237 / 2244

页数：8

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