Study of the Low Frequency Noise of Metallic Emitter SiGeC Heterojunction Bipolar Transistors

被引：0
|
作者：
Pascal, F. [1 ]
Raoult, J. [1 ]
Leyris, C. [2 ]
机构：
[1] Univ Montpellier 2, UMR 5214, Inst Elect Sud, Pl Bataillon, F-34095 Montpellier 5, France
[2] STMicroelectronics, F-38926 Crolles, France
来源：
NOISE AND FLUCTUATIONS | 2009年 / 1129卷
关键词：
BiCMOS; Heterojunction Bipolar Transistor; Metallic emitter; SiGeC base; Low-frequency noise;
D O I：
暂无
中图分类号：
Q6 [生物物理学];
学科分类号：
071011 ;
摘要：
In this paper, we have been investigating both static and Low-Frequency noise (LF noise) characteristics of metallic emitter Si-SiGe:C Heterojunction Bipolar Transistors (HBTs) based on a 0.13 mu m technology developed by ST Microelectronics. This study is based on a comparison between the standard mono-emitter process and the metal emitter process. Static results confirm an increase in IB with an I-C constant and an increase in the figure-of-merit f(T)x BVCE0, We found a decrease in the 1/f noise level for the metallic emitter HBTs. The base current noise spectral density SIB evolves quadratically with I-B and K-F is found to be inversely proportional to A(E). These static and noise results will be presented and discussed. In particular, we emphasize the role of the cobalt silicidation on the excess noise.
引用
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页码：325 / +
页数：2
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