Formation of anti-reflection films and p-n junction by sol-gel process for one step process

被引：0

作者：

Lee, Seung Jun ^{[1
]}

Yoon, Dae Ho ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2014年 / 15卷 / 03期

关键词：

Anti-reflection; P-n junction; Sol-gel; Silicon nitride; Solar cell; CHEMICAL-VAPOR-DEPOSITION; SILICON-NITRIDE; THIN-FILMS; DEFECT PASSIVATION; CELLS; SPECTROSCOPY; COATINGS; OXIDES; LAYER; XPS;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study examined a method to form simultaneously SiO2/SiN anti-reflection coating (ARC) films and p-n junction using a sol-gel method and heat treatment under nitridation environment for multi-crystalline silicon solar cells. Three processes such as p-n junction formation, ARC could be reduced into one step process. Chemical analysis of films after a nitridation treatment indicated a high Si-O and Si-N peak intensity. The SiO2/SiN films made from nitridation treatment at 1000 degrees C showed 13% reflectance at 550 nm. Also, the formation of a p-n junction was confirmed by I-V test.

引用

页码：193 / 196

页数：4

共 18 条

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