Formation of anti-reflection films and p-n junction by sol-gel process for one step process

被引:0
作者
Lee, Seung Jun [1 ]
Yoon, Dae Ho [1 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
来源
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2014年 / 15卷 / 03期
关键词
Anti-reflection; P-n junction; Sol-gel; Silicon nitride; Solar cell; CHEMICAL-VAPOR-DEPOSITION; SILICON-NITRIDE; THIN-FILMS; DEFECT PASSIVATION; CELLS; SPECTROSCOPY; COATINGS; OXIDES; LAYER; XPS;
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study examined a method to form simultaneously SiO2/SiN anti-reflection coating (ARC) films and p-n junction using a sol-gel method and heat treatment under nitridation environment for multi-crystalline silicon solar cells. Three processes such as p-n junction formation, ARC could be reduced into one step process. Chemical analysis of films after a nitridation treatment indicated a high Si-O and Si-N peak intensity. The SiO2/SiN films made from nitridation treatment at 1000 degrees C showed 13% reflectance at 550 nm. Also, the formation of a p-n junction was confirmed by I-V test.
引用
收藏
页码:193 / 196
页数:4
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