A Fully-integrated 18 GHz Class-E Power Amplifier in a 45 nm CMOS SOI Technology

被引：0

作者：

Chen, Jing-Hwa ^{[1
]}

Helmi, Sultan R. ^{[1
]}

Jou, Alice Yi-Szu ^{[1
]}

Mohammadi, Saeed ^{[1
]}

机构：

[1] Purdue Univ, W Lafayette, IN 47907 USA

来源：

2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2014年

关键词：

Class-E; CMOS; K-band; RF power amplifier; SOI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully-integrated Class-E power amplifier (PA) operating at 18 GHz is implemented in a standard 45 nm CMOS SOI technology. The PA is designed using differential Cascode topology with cross-coupled capacitors for Gate-Drain capacitance neutralization. The measured single-ended saturated power (P-SAT) under a supply voltage of 2 V is 15.9 dBm (differential P-SAT of 18.9 dB) and the 1-dB single-ended compression power (P-1dB) is 13.3 dBm, with a peak power added efficiency (PAE) of 41.4%. The Gate-Drain capacitance neutralization technique facilitates the class-E operation and improves the PAE by similar to 20%.

引用

页码：247 / 250

页数：4

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