An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

被引：27

作者：

Fujihara, Yasuyuki ^{[1
]}

Murata, Maasa ^{[1
]}

Nakayama, Shota ^{[1
]}

Kuroda, Rihito ^{[1
]}

Sugawa, Shigetoshi ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 01期

基金：

日本学术振兴会;

关键词：

Signal to noise ratio; Capacitors; Transistors; Electric potential; Capacitance; Voltage measurement; Sensitivity; CMOS image sensor (CIS); lateral overflow integration capacitor (LOFIC); signal-to-noise ratio (SNR); wide dynamic range (WDR); SENSITIVITY;

D O I：

10.1109/TED.2020.3038621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

引用

页码：152 / 157

页数：6

共 37 条

[1] A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor [J].