Deformation-induced phase transformation in 4H-SiC nanopillars

被引：15

作者：

Chen, Bin ^{[1
]}

Wang, Jun ^{[2
,3
]}

Zhu, Yiwei ^{[1
]}

Liao, Xiaozhou ^{[1
]}

Lu, Chunsheng ^{[4
]}

Mai, Yiu-Wing ^{[1
]}

Ringer, Simon P. ^{[1
,5
]}

Ke, Fujiu ^{[6
]}

Shen, Yaogen ^{[3
]}

机构：

[1] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[2] Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China

[3] City Univ Hong Kong, Dept Mech & Biomed Engn, Kowloon, Hong Kong, Peoples R China

[4] Curtin Univ, Dept Mech Engn, Perth, WA 6845, Australia

[5] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[6] Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China

来源：

ACTA MATERIALIA | 2014年 / 80卷

基金：

澳大利亚研究理事会; 中国国家自然科学基金;

关键词：

SiC nanopillars; Phase transformation; In situ deformation; Transmission electron microscopy; Molecular dynamics; POLYTYPIC TRANSFORMATION; SEMICONDUCTOR NANOWIRES; SIC NANOWIRES; PLASTICITY; TRANSITION; STRENGTH; CRYSTALS; FRACTURE; DEFECTS; ZNO;

D O I：

10.1016/j.actamat.2014.07.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deformation behaviour of single-crystal SiC nanopillars was studied by a combination of in situ deformation transmission electron microscopy and molecular dynamics simulations. An unexpected deformation-induced phase transformation from the 4H hexagonal structure to the 3C face-centred cubic structure was observed in these nanopillars at room temperature. Atomistic simulations revealed that the 4H to 3C phase transformation follows a stick-slip process with initiation and end stresses of 12.1-14.0 and 7.9-9.0 GPa, respectively. The experimentally measured stress of 9-10 GPa for the phase transformation falls within the range of these theoretical upper and lower stresses. The reasons for the phase transformation are discussed. The finding sheds light on the understanding of phase transformation in polytypic materials at low temperature. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：392 / 399

页数：8

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