Robust PIN photodiode with a guard ring protection structure

被引：9

作者：

Sun, MY ^{[1
]}

Xie, KZ

Lu, YC

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] Anadig Inc, Warren, NJ 07059 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 06期

关键词：

electrostatic discharge (ESD); guard ring (GR); human body model (HBM); InGaAs; optical communication; photodiode;

D O I：

10.1109/TED.2004.827374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A guard ring (GR) structure is used to protect a planar InGaAs pin photodiode. The human body model (HBM) measurement results show that a photodiode with a GR, which is shorted to the cathode, is able to withstand an electrostatic discharge (ESD) threshold voltage of up to 200 V, whereas a similar photodiode without a GR structure can only withstand 50 V ESD threshold voltage. The capacitance and bandwidth measurement results show that the GR has negligible negative effects on the pin diode performance.

引用

页码：833 / 838

页数：6

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