X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited by reactive sputtering using O2/Ar gas mixtures

被引:48
作者
Jung, MC
Kim, HD
Han, M [1 ]
Jo, W
Kim, DC
机构
[1] Univ Seoul, Dept Phys, Seoul 130743, South Korea
[2] LG Corp Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 08期
关键词
Pt; oxidation states; microstructure; X-ray photoelectron spectroscopy; reactive sputtering;
D O I
10.1143/JJAP.38.4872
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin-film oxides of Pt were grown reactively by rf magnetron sputtering and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Oxygen incorporation of the Rims was adjusted by controlling the oxygen mixing ratio (OMR). XRD reflections indicated that these samples have an amorphous structure without crystalline ordering of the Pt-O phases. SEM pictures showed that the information of protrusions appear under the condition of large OMR. The XPS spectra revealed chemical shifts of Pt 4f peaks, which are ascribed to two different oxidation states of Pt. The amounts of the energy shifts are 1.0 and 2.1 eV, implying that the Pt oxide thin films are composed of PtO grains and intermediate oxides of PtO and PtO2.
引用
收藏
页码:4872 / 4875
页数:4
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