Characterization of Eu-doped Ba2SiO4, a high light yield scintillator

被引：56

作者：

Nakauchi, Daisuke ^{[1
]}

Kato, Takumi ^{[1
]}

Kawaguchi, Noriaki ^{[1
]}

Yanagida, Takayuki ^{[1
]}

机构：

[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama, Nara 6300192, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 12期

基金：

日本学术振兴会;

关键词：

scintillator; radioluminescence; photoluminescence; phosphor; dosimetry; radiation measurements; afterglow; LUMINESCENCE PROPERTIES; OPTICAL-PROPERTIES; ENERGY-RESOLUTION; PHOSPHORS; CERAMICS; CE;

D O I：

10.35848/1882-0786/abc574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence and scintillation characteristics of Eu-doped Ba2SiO4 were investigated. A broad emission band due to Eu2+ is observed at 500 nm, and the photoluminescence and radioluminescence decay time constants are about 397 and 515 ns, respectively. From the pulse height distribution of Co-57 gamma-rays, the light yield of Eu:Ba2SiO4 is similar to 48 000 ph MeV-1, which is comparable with those of developed oxide scintillators showing a high light yield. The results demonstrate that Eu-doped Ba2SiO4 is a high-performance scintillator for X- and gamma-ray measurements and characterized by excellent scintillation output and afterglow.

引用

页数：3