nBn detector, an infrared detector with reduced dark current and higher operating temperature

This letter presents a type of infrared detector named the nBn detector. The nBn design essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced dark current and noise, compared to other midwave infrared detectors, such as p-n photodiodes. This enables the nBn to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors and have greater detectivity near room temperature. The nBn is demonstrated in InAs and InAsSb materials, exhibiting cutoff wavelengths of 3.4 and 4.2 mu m, respectively. (c) 2006 American Institute of Physics.