TCAD design of InGaN-based monolithic multi-wavelength LED with controlled Power spectral distributions

被引：2

作者：

Ahmad, Habib ^{[1
]}

Hussain, Shahzad ^{[2
]}

Shah, Ijteba-ul-Hasnain ^{[3
]}

机构：

[1] NUST, CEME, Islamabad, Pakistan

[2] NUST, SCME, Islamabad, Pakistan

[3] CESAT, Islamabad, Pakistan

来源：

OPTIK | 2015年 / 126卷 / 21期

关键词：

InGaN; AlGaN EBL; SQW structure; TAL; BAL; SI;

D O I：

10.1016/j.ijleo.2015.07.071

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Voltage-controlled tricolor novel solid state LED has been presented in this paper. The monolithic structure of indium gallium nitride (InGaN)-based double Quantum Well (DQW) light-emitting diode (LED) has been designed and simulated with SILVACO Technology Computer Aided Design (TCAD). Each quantum well and decoupling region is carefully designed to control illumination colors with applied potentials. Electron-hole recombination and illumination in each quantum well dominate at specific applied potentials. The spectral power distribution, electrons and holes concentrations in the active regions, energy band diagrams and power conversion efficiency for the solid-state lighting (SSL) structure are investigated. Effects of doping concentration in decoupling region, indium content in the InGaN alloy and active layers thicknesses, on the emission spectra are also discussed. The simulated results indicate that an LED with an optimized structure can be produced from blue to cyan and then green light emissions with voltage tuning. (C) 2015 Elsevier GmbH. All rights reserved.

引用

页码：3140 / 3144

页数：5

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