Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

被引：21

作者：

Bolat, S. ^{[1
,2
]}

Ozgit-Akgun, C. ^{[2
,3
]}

Tekcan, B. ^{[1
,2
]}

Biyikli, N. ^{[2
,3
]}

Okyay, A. K. ^{[1
,2
,3
]}

机构：

[1] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[2] Bilkent Univ, Natl Nanotechnol Res Ctr, UNAM, TR-06800 Ankara, Turkey

[3] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 24期

关键词：

ALN;

D O I：

10.1063/1.4884061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report GaN thin film transistors (TFT) with a thermal budget below 250 degrees C. GaN thin films are grown at 200 degrees C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I-ON/I-OFF) of 10(3) and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 degrees C, which is the lowest process temperature reported for GaN based transistors, so far. (C) 2014 AIP Publishing LLC.

引用

页数：3

共 21 条

[1] Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer [J].