Temperature-dependent photoluminescence of ZnO layers grown on 6H-SiC substrates

被引：44

作者：

Ashrafi, ABMA ^{[1
]}

Binh, NT ^{[1
]}

Zhang, BP ^{[1
]}

Segawa, Y ^{[1
]}

机构：

[1] Inst Phys & Chem Res, Photodynam Res Ctr, Lab Photophys, Sendai, Miyagi, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 12期

关键词：

D O I：

10.1063/1.1649451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent photoluminescence (PL) of ZnO layers grown on 6H-SiC substrates has been described. The PL spectra were dominated by free exciton (FX) emission throughout the whole temperature range, which reflects shallow nonradiative centers in high crystalline ZnO layers. The temperature-dependent exciton peak energy as well as intensity quenching due to overlapping of FX and (DX)-X-0 (donor-bound exciton) bands has been addressed with an inclusion of donor-bound exciton-like defects. The (DX)-X-0 linewidth of similar to8 meV exhibited the thermal activation energy of similar to16 meV, closely consistent with the exciton-defect binding energy. This particular bound-exciton peak suggests that it dissociates into a FX and a neutral-donor-bound-like defects pair complex with the increase of temperature. (C) 2004 American Institute of Physics.

引用

页码：7738 / 7741

页数：4

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