Infrared analysis on hydrogen content and Si-H bonding configuration of hydrogenated nanocrystalline silicon thin films

被引：8

作者：

Chen Cheng-Zhao ^{[1
]}

Qiu Sheng-Hua ^{[1
]}

Liu Cui-Qing ^{[1
]}

Wu Yan-Dan ^{[1
]}

Li Ping ^{[1
]}

Yu Chu-Ying ^{[2
]}

Lin Xuan-Ying ^{[1
,2
]}

机构：

[1] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China

[2] Shantou Univ, Dept Phys, Shantou 515063, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 04期

关键词：

hydrogenated nanocrystalline silicon films; Fourier transform infrared spectra; hydrogen content; silicon-hydrogen bonding configuration; MICROSTRUCTURE;

D O I：

10.7498/aps.58.2565

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hydrogenated silicon films were prepared by conventional radio frequency plasma-enhanced chemical vapor phase deposition technique at a high deposition rate at temperatures from 100 to 350 degrees C, which were studied by Fourier transform infrared spectrum and Raman scattering spectrum. The results showed that the hydrogen content and the silicon-hydrogen bonding configurations of the films were closely related to their crystallization properties. When the films changed from amorphous to nanocrystalline phase, the hydrogen content decreased by over a half, and the Si-H bonding configuration was mainly SiH2. With the increase of substrate temperature and crystallinity, the hydrogen content and the structural factor of the nanocrystalline silicon films was reduced gradually.

引用

页码：2565 / 2571

页数：7

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