Infrared analysis on hydrogen content and Si-H bonding configuration of hydrogenated nanocrystalline silicon thin films

Hydrogenated silicon films were prepared by conventional radio frequency plasma-enhanced chemical vapor phase deposition technique at a high deposition rate at temperatures from 100 to 350 degrees C, which were studied by Fourier transform infrared spectrum and Raman scattering spectrum. The results showed that the hydrogen content and the silicon-hydrogen bonding configurations of the films were closely related to their crystallization properties. When the films changed from amorphous to nanocrystalline phase, the hydrogen content decreased by over a half, and the Si-H bonding configuration was mainly SiH2. With the increase of substrate temperature and crystallinity, the hydrogen content and the structural factor of the nanocrystalline silicon films was reduced gradually.