Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors

被引:243
作者
Arnold, Andrew J. [1 ,4 ]
Razavieh, Ali [5 ]
Nasr, Joseph R. [2 ,4 ]
Schulman, Daniel S. [3 ,4 ]
Eichfeld, Chad M. [4 ]
Das, Saptarshi [2 ,4 ]
机构
[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Engn Sci & Mech, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Sci & Engn, University Pk, PA 16802 USA
[4] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[5] Albany NanoTech Complex, GLOBALFOUNDRIES, Albany, NY 12203 USA
关键词
chemical synapse; neurotransmitter release; long-term potentiation; MoS2 field effect transistor; gate hysteresis; LONG-TERM POTENTIATION; GLUTAMATE; COTRANSMISSION; PROBABILITY; PLASTICITY; RECEPTORS; BRANCHES; DEVICE; MODEL;
D O I
10.1021/acsnano.7b00113
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Neurotransmitter release in chemical synapses is fundamental to diverse brain functions such as motor action, learning, cognition, emotion, perception, and consciousness. Moreover, improper functioning or abnormal release of neurotransmitter is associated with numerous neurological disorders such as epilepsy, sclerosis, schizophrenia, Alzheimer's disease, and Parkinson's disease. We have utilized hysteresis engineering in a back-gated MoS2 field effect transistor (FET) in order to mimic such neurotransmitter release dynamics in chemical synapses. All three essential features, i.e., quantal, stochastic, and excitatory or inhibitory nature of neurotransmitter release, were accurately captured in our experimental demonstration. We also mimicked an important phenomenon called longterm potentiation (LTP), which forms the basis of human memory. Finally, we demonstrated how to engineer the LTP time by operating the MoS2 FET in different regimes. Our findings could provide a critical component toward the design of next-generation smart and intelligent human-like machines and human machine interfaces.
引用
收藏
页码:3110 / 3118
页数:9
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