KTa0.6Nb0.4O3 ferroelectric thin film behavior at microwave frequencies for tunable applications

被引：28

作者：

Laur, Vincent ^{[1
]}

Rousseau, Anthony

Tanne, Gerard

Laurent, Paul

Deputier, Stephanie

Guilloux-Viry, Maryline

Huret, Fabrice

机构：

[1] CNRS, LEST, UBO, ENSTBr,UMR 6165, F-29238 Brest 3, France

[2] Univ Rennes 1, CNRS, Unite Sci Chim Rennes, UMR 6226, F-35042 Rennes, France

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2006年 / 53卷 / 12期

关键词：

D O I：

10.1109/TUFFC.2006.174

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.

引用

页码：2280 / 2286

页数：7

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