High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers

被引：21
|
作者：
Kim, Dong Hun [1 ]
Choi, Seung-Hoon [2 ]
Cho, Nam Gyu [1 ]
Chang, YoungEun [1 ]
Kim, Ho-Gi [1 ]
Hong, Jae-Min [2 ]
Kim, Il-Doo [2 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Ctr Energy Mat Res, Seoul 130650, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 08期
关键词：
ageing; gallium compounds; indium compounds; leakage currents; passivation; permittivity; polymer films; semiconductor materials; sputter deposition; thin film transistors; FIELD-EFFECT TRANSISTORS; POLYMER; MOBILITY;
D O I：
10.1149/1.3142470
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report on the fabrication and characterization of sputter-deposited poly(methyl methacrylate) (PMMA) thin films used as gate insulators as well as passivation layers in high performance InGaZnO4 thin-film transistors (TFTs). Sputter-deposited PMMA thin films exhibited a dielectric constant of 4.3 and low leakage current characteristics (<similar to 2x10(-8) A/cm(2) at 0.3 MV/cm). The InGaZnO4 TFTs utilizing PMMA gate insulators and PMMA passivation layers exhibited a high on/off current ratio of 4.08x10(6) and a high field-effect mobility of 36.1 cm(2)/V s. Threshold voltage and field-effect mobility remained constant after aging in air atmosphere for 5 months.
引用
收藏
页码：H296 / H298
页数：3
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