Broadband Sensitization of Lanthanide Emission with Indium Phosphide Quantum Dots for Visible to Near-Infrared Downshifting

被引:51
作者
Swabeck, Joseph K. [1 ,2 ]
Fischer, Stefan [1 ,2 ]
Bronstein, Noah D. [1 ,2 ]
Alivisatos, A. Paul [1 ,2 ,3 ,4 ]
机构
[1] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA
关键词
UP-CONVERSION; NANOCRYSTALS; INP; SHELL; LUMINESCENCE; FLUORIDES; IONS;
D O I
10.1021/jacs.8b02612
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconductor quantum dot (QD)-sensitized lanthanide ions hold great promise in producing a broadly absorbing and sharply emitting luminophore, but their synthesis has proven to be difficult. We report the first synthesis of core/shell/shell InP/Ln(x)Y(1-x)F(3)/ShF(3) (Ln = Yb, Nd; Sh = Lu, Y) nanocrystals that exhibit a broad visible absorption coupled to a sharp near-infrared emission. Additionally, this is the first report of Nd being coupled to a QD absorber. We characterize the system with a variety of electron microscopy and X-ray techniques that prove this unique structure. Optical measurements confirm the correlation of the Ln(3+) emission to the QD absorption, while the presence of a trap-state emission gives a clue as to the mechanism of energy transfer between the dot and the lanthanide.
引用
收藏
页码:9120 / 9126
页数:7
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