Large area CVD growth of graphene

被引：186

作者：

Chen, Xiangping ^{[1
]}

Zhang, Lili ^{[2
]}

Chen, Shanshan ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Inst Chem Engn & Sci, Heterogeneous Catalysis, Singapore 627833, Singapore

来源：

SYNTHETIC METALS | 2015年 / 210卷

关键词：

Graphene; CVD; Large area; Bilayer; Multilayer; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL GRAPHENE; HIGH-QUALITY GRAPHENE; HEXAGONAL BORON-NITRIDE; CU-NI ALLOY; STACKED BILAYER GRAPHENE; WAFER-SCALE SYNTHESIS; LAYER GRAPHENE; THERMAL-CONDUCTIVITY; CARBON SEGREGATION;

D O I：

10.1016/j.synthmet.2015.07.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the past decade, graphene, a single layer of sp(2)-hybridized carbon atoms, has attracted enormous interest among scientists due to its unique physical, mechanical and electrical properties. Recently developed chemical vapor deposition technique has emerged as the most popular method for the scalable production of large-area and high-quality graphene for various applications. The key objective of this article is to provide a detailed and up to date review on the synthesis of large area monolayer, bilayer and multilayer graphene on different substrates via chemical vapor deposition method. Challenges and future perspective in this field are highlighted. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：95 / 108

页数：14

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